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MBR735 - MBR760 MBR735 - MBR760 Features * * * * * * Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. .113(2.87) .103(2.62) .594(15.1) .587(14.91) .27(6.86) .23(5.84) .412(10.5) MAX DIA .154(3.91) .148(3.74) .185(4.70) .175(4.44) .055(1.40) .045(1.14) 1 .16(4.06) .14(3.56) 2 Dimensions are in: inches (mm) .56(14.22) .53(13.46) .11(2.79) .10(2.54) TO-220AC .037(0.94) .027(0.68) 7.5 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO if(repetitive) if(surge) Average Rectified Current Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 105C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature .205(5.20) .195(4.95) PIN 1 + + PIN 2 CASE Positive CASE .025(0.64) .014(0.35) TA = 25C unless otherwise noted Dimensions are in: inches (mm) Parameter Value 7.5 15 150 2.0 16.6 60 3.0 -65 to +175 -65 to +150 Units A A A W mW/C C/W C/W C C PD RJA RJL Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Parameter TA = 25C unless otherwise noted Device 735 745 45 31 45 10,000 0.1 15 0.57 0.84 0.72 1.0 0.5 50 0.75 0.65 0.5 750 50 35 50 760 60 42 60 35 24 35 Units V V V V/uS mA mA V V V V A Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Voltage Rate of Change (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 125C Maximum Forward Voltage IF = 7.5 A, TC = 25C IF = 7.5 A, TC = 125C IF = 15 A, TC = 25C IF = 15 A, TC = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz (c)1999 Fairchild Semiconductor Corporation MBR735 - MBR760, Rev. A MBR735 - MBR760 Schotty Barrier Rectifier (continued) Typical Characteristics Forward Current Derating Curve 10 FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 175 150 125 100 75 50 25 Non-Repetitive Surge Current 8 MBR750-MBR760 6 MBR735-MBR745 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 4 2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 Forward Characteristics 50 REVERSE CURRENT (mA) FORWARD CURRENT (A) T A = 125 C Reverse Characteristics 50 T A = 125 C 10 10 MBR735-MBR745 TA = 25 C MBR735-MBR745 1 MBR750-MBR760 TA = 75 C 1 0.1 MBR735-MBR745 MBR750-MBR760 TA = 25 C 0.1 Pulse Width = 300S 2% Duty Cycle 0.01 MBR750-MBR760 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 1.2 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE ( C/W) Typical Junction Capacitance 5000 JUNCTION CAPACITANCE (pF) Transient Thermal Impedance 100 1000 MBR735-MBR745 10 MBR750-MBR760 100 1 10 0.1 1 10 REVERSE VOLTAGE (V) 100 0.1 0.01 0.1 1 10 T. PULSE DURATION (sec.) 100 MBR735 - MBR760, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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